2SC3356G-B-AE3-R(2018) 查看數據表（PDF） - Unisonic Technologies
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2SC3356G-B-AE3-R Datasheet PDF : 4 Pages
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2SC3356
TYPICAL CHARACTERISTICS
NPN SILICON TRANSISTOR
DC Current Gain vs. Collector Current
200
VCE=10V
100
50
20
100.5 1
5 10
50
Collector Current, IC (mA)
15
Insertion Gain vs. Collector Current
10
5
VCE=10V
f=1.0GHz
00.5 1
5 10
Collector Current, IC (mA)
50 70
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