2SC3352 查看數據表（PDF） - SavantIC Semiconductor

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2SC3352

SILICON POWER TRANSISTOR

SavantIC Semiconductor  

SavantIC Semiconductor

Silicon NPN Power Transistors

Product Specification

2SC3352

CHARACTERISTICS

Tj=25 unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

V(BR)CEO Collector-emitter breakdown voltage IC=10mA , IB=0

VCEsat Collector-emitter saturation voltage IC=1A; IB=0.2A

VBEsat

Base-emitter saturation voltage

IC=1A; IB=0.2A

ICBO

Collector cut-off current

VCB=800V; IE=0

IEBO

Emitter cut-off current

VEB=5V; IC=0

hFE-1

DC current gain

IC=0.1A ; VCE=5V

hFE-2

DC current gain

IC=1A ; VCE=5V

fT

Transition frequency

IC=0.2A ; VCE=10V

Switching times

ton

Turn-on time

tstg

Storage time

tf

Fall time

IC=1A; IB1=-IB2=0.2A

VCC=200V

MIN TYP. MAX UNIT

500

V

1.0

V

1.5

V

0.1 mA

0.1 mA

15

8

2.5

MHz

1.0

µs

3.0

µs

1.0

µs

2

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