2SC3447N 查看數據表（PDF） - Quanzhou Jinmei Electronic
零件编号
产品描述 (功能)
生产厂家
2SC3447N Datasheet PDF : 4 Pages
| |||
JMnic
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=5mA ; RBE=∞
V(BR)CBO Collector-base breakdown voltage
IC=1mA ; IE=0
V(BR)EBO Emitter-base breakdown voltage
IE=1mA ; IC=0
VCEsat Collector-emitter saturation voltage IC=3A; IB=0.6A
VBEsat Base-emitter saturation voltage
IC=3A; IB=0.6A
ICBO
Collector cut-off current
VCB=500V ;IE=0
IEBO
Emitter cut-off current
VEB=5V; IC=0
hFE-1
DC current gain
IC=0.6A ; VCE=5V
hFE-2
DC current gain
IC=3A ; VCE=5V
fT
Transition frequency
IC=0.6A ; VCE=10V
COB
Output capacitance
IE=0;f=1MHz ; VCB=10V
Switching times
ton
Turn-on time
tstg
Storage time
tf
Fall time
VCC=200V; IC=4A
IB1=0.8A;IB2=-1.6A;
RL=50Ω
hFE-1 classifications
L
M
N
15-30
20-40
30-50
Product Specification
2SC3447
MIN TYP. MAX UNIT
500
V
800
V
7
V
1.0
V
1.5
V
10
μA
10
μA
15
50
8
18
MHz
80
pF
0.5 μs
3.0 μs
0.3 μs
2
Share Link: 