2SC3451 查看數據表（PDF） - Quanzhou Jinmei Electronic
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2SC3451 Datasheet PDF : 4 Pages
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JMnic
Silicon NPN Power Transistors
Product Specification
2SC3451
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=5mA ;RBE=∞
V(BR)CBO Collector-base breakdown voltage
IC=1mA ;IE=0
V(BR)EBO Emitter-base breakdown voltage
IE=1mA ;IC=0
VCEsat Collector-emitter saturation voltage IC=6A ;IB=1.2A
VBEsat Base-emitter saturation voltage
IC=6A ;IB=1.2A
ICBO
Collector cut-off current
VCB=500V; IE=0
IEBO
Emitter cut-off current
VEB=5V; IC=0
hFE-1
DC current gain
IC=1.2A ; VCE=5V
hFE-2
DC current gain
IC=6A ; VCE=5V
Cob
Output capacitance
IE=0 ; VCB=10V;f=1MHz
fT
Transition frequency
IC=1.2A ; VCE=10V
Switching times
ton
Turn-on time
tstg
Storage time
tf
Fall time
IC=7A;RL=28.6Ω
IB1=1.4A; IB2=-2.8A
VCC=200V
hFE-1 Classifications
L
M
N
15-30
20-40
30-50
MIN TYP. MAX UNIT
500
V
800
V
7
V
1.0
V
1.5
V
10
μA
10
μA
15
50
8
160
pF
18
MHz
0.5
μs
3.0
μs
0.3
μs
2
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