2SC3665 查看數據表（PDF） - Toshiba
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2SC3665 Datasheet PDF : 3 Pages
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TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
2SC3665
Audio Power Amplifier Applications
Driver-Stage Amplifier Applications
2SC3665
Unit: mm
• Complementary to 2SA1425.
Maximum Ratings (Ta = 25°C)
Characteristics
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature range
Symbol
VCBO
VCEO
VEBO
IC
IB
PC
Tj
Tstg
Rating
Unit
120
V
120
V
5
V
800
mA
80
mA
1000
mW
150
°C
−55 to 150
°C
Electrical Characteristics (Ta = 25°C)
JEDEC
―
JEITA
―
TOSHIBA
2-7D101A
Weight: 0.2 g (typ.)
Characteristics
Symbol
Test Condition
Collector cut-off current
Emitter cut-off current
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
Transition frequency
Collector output capacitance
ICBO
IEBO
V (BR) CEO
VCB = 120 V, IE = 0
VEB = 5 V, IC = 0
IC = 10 mA, IB = 0
V (BR) EBO IE = 1 mA, IC = 0
hFE
VCE = 5 V, IC = 100 mA
(Note)
VCE (sat) IC = 500 mA, IB = 50 mA
VBE
VCE = 5 V, IC = 500 mA
fT
VCE = 5 V, IC = 100 mA
Cob
VCB = 10 V, IE = 0, f = 1 MHz
Note: hFE classification O: 80 to 160, Y: 120 to 240
Marking
Min Typ. Max Unit
―
― 100 nA
―
― 100 nA
120 ―
―
V
5
―
―
V
80
― 240
―
―
1.0
V
―
―
1.0
V
― 120 ― MHz
―
―
30
pF
C3665
Characteristics
indicator
Part No. (or abbreviation code)
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
1
2004-07-07
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