2SC3665 查看數據表（PDF） - Toshiba
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2SC3665 Datasheet PDF : 3 Pages
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1000
800
600
400
200
0
0
IC – VCE
15
10
Common emitter
Ta = 25°C
7
5
4
3
2
IB = 1 mA
0
2
4
6
8
10
12
14
Collector-emitter voltage VCE (V)
2SC3665
1000
500
300
100
50
20
3
hFE – IC
Common emitter
VCE = 5 V
Ta = 100°C
25
−25
10
30
100
300
Collector current IC (mA)
1000
VCE (sat) – IC
0.5
Common emitter
0.3 IC/IB = 10
Ta = 100°C
0.1
25
0.05
−25
0.03
0.01
3
10
30
100
300
Collector current IC (mA)
1000
PC – Ta
1.2
1.0
0.8
0.6
0.4
0.2
0
0 20 40 60 80 100 120 140 160
Ambient temperature Ta (°C)
IC – VBE
800
Common emitter
VCE = 5 V
600
400
Ta = 100°C
25
−25
200
0
0
0.2
0.4
0.6
0.8
1.0
1.2
Base-emitter voltage VBE (V)
Safe Operating Area
5
3
IC max (pulsed)*
1 IC max (continuous)
1 ms*
10 ms*
0.5
100 ms*
0.3
DC operation
Ta = 25°C
0.1
0.05
0.03
0.01
*: Single nonrepetitive pulse
0.005
Ta = 25°C
0.003
Curves must be derated linearly
with increase in temperature.
0.001
0.3
1
3
10 30
100 300
Collector-emitter voltage VCE (V)
1000
2
2004-07-07
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