2SC3666 查看數據表（PDF） - Toshiba
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2SC3666 Datasheet PDF : 3 Pages
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1200
Common emitter
IC – VCE
Ta = 25°C
1000
9
8
7
6
800
5
4
600
3
400
2
IB = 1 mA
200
0
0
0
1
2
3
4
5
6
Collector-emitter voltage VCE (V)
2SC3666
1000
500
300
hFE – IC
Ta = 100°C
Common emitter
VCE = 2 V
100
−25
25
50
30
10
1
3
10
30
100
300
1000
Collector current IC (mA)
VCE (sat) – IC
1
Common emitter
0.5
IC/IB = 10
0.3
Ta = 100°C
0.1
0.05
25
0.03
−25
0.01
1
3
10
30
100
300
Collector current IC (mA)
1000
PC – Ta
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
0 20 40 60 80 100 120 140 160
Ambient temperature Ta (°C)
1000
500
300
IC – VBE
Common emitter
VCE = 2 V
100
50
30 Ta = 100°C
25
−25
10
5
3
1
0
0.4
0.8
1.2
1.6
2.0
Base-emitter voltage VBE (V)
Safe Operating Area
5
3 IC max (pulsed)*
IC max (continuous)
1
1 ms*
10 ms*
0.5
100 ms*
0.3
DC operation
0.1
Ta = 25°C
0.05
0.03
*: Single nonrepetitive pulse
Ta = 25°C
0.01
Curves must be derated linearly with
0.005 increase in temperature.
0.003
0.1
0.3
1
3
10
30
100
Collector-emitter voltage VCE (V)
2
2004-07-07
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