C3673 查看數據表（PDF） - Toshiba
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C3673 Datasheet PDF : 5 Pages
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TOSHIBA Transistor Silicon NPN Epitaxial Type
2SC3673
Switching Applications
Solenoid Drive Applications
2SC3673
Unit: mm
• High DC current gain: hFE = 500 (min) (IC = 400 mA)
• Low collector-emitter saturation voltage: VCE (sat) = 0.5 V (max)
(IC = 300 mA)
Maximum Ratings (Ta = 25°C)
Characteristics
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature range
Symbol
VCBO
VCEO
VEBO
IC
IB
PC
Tj
Tstg
Rating
Unit
40
V
40
V
7
V
2
A
0.5
A
1000
mW
150
°C
−55 to 150
°C
Electrical Characteristics (Ta = 25°C)
Characteristics
Collector cut-off current
Emitter cut-off current
Collector-emitter breakdown voltage
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
Test Condition
ICBO
IEBO
V (BR) CEO
hFE
VCE (sat)
VBE (sat)
fT
Cob
VCB = 40 V, IE = 0
VEB = 7 V, IC = 0
IC = 10 mA, IB = 0
VCE = 1 V, IC = 400 mA
IC = 300 mA, IB = 1 mA
IC = 300 mA, IB = 1 mA
VCE = 2 V, IC = 100 mA
VCB = 10 V, IB = 0, f = 1 MHz
JEDEC
―
JEITA
―
TOSHIBA
2-7D101A
Weight: 0.2 g (typ.)
Min Typ. Max Unit
―
―
10
µA
―
―
1
µA
40
―
―
V
500 ―
―
―
0.3 0.5
V
―
―
1.1
V
― 220 ― MHz
―
20
―
pF
Turn-on time
Switching time Storage time
Fall time
ton
―
1.0
―
20 µs
Input IB1
Output
tstg
IB2
―
3.0
―
µs
VCC = 30 V
tf
IB1 = −IB2 = 1 mA, duty cycle ≤ 1%
―
1.2
―
1
2004-07-26
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