2SC3648
NPN SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATING (Ta = 25°C)
PARAMETER
SYMBOL
RATINGS
UNIT
Collector to Base Voltage
VCBO
180
V
Collector to Emitter Voltage
VCEO
160
V
Emitter to Base Voltage
VEBO
6
V
Collector Current
IC
0.7
A
Collector Current (Pulse)
ICP
1.5
A
Collector Dissipation
PC
500
mW
Junction Temperature
TJ
150
°C
Storage Temperature
TSTG
-40 ~ +150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (Ta= 25°C, unless otherwise specified)
PARAMETER
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Output Capacitance
DC Current Gain
Turn-on Time
Storage Time
Fall Time
Gain-Bandwidth Product
SYMBOL
BVCBO
BVCEO
BVEBO
ICBO
IEBO
VCE(SAT)
VBE(SAT)
Cob
hFE1
hFE2
tON
tSTG
tF
fT
CLASSIFICATION OF hFE1
RANK
RANGE
R
100 ~ 200
TEST CONDITIONS
IC =10μA, IE =0
IC =1, RBE =∞
IE =10μA, IC=0
VCB =120V, IE =0
VEB =4V, IC =0
IC =250mA, IB =25mA
IC =250mA, IB =25mA
VCB =10V, f =1MHz
VCE =5V, IC =100mA
VCE =5V, IC =10mA
See specified Test circuit
See specified Test circuit
See specified Test circuit
VCE =5V, IC =50mA
S
140 ~ 280
MIN TYP MAX UNIT
180
V
160
V
6
V
0.1 μA
0.1 μA
0.12 0.4 V
0.85 1.2 V
8
pF
100
400
90
50
ns
1000
ns
60
ns
120
MHz
T
200 ~ 400
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 5
QW-R208-038,C