2SC3657 查看數據表（PDF） - Inchange Semiconductor
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2SC3657 Datasheet PDF : 2 Pages
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INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2SC3657
DESCRIPTION
·High Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 800V(Min)
·Fast Switching Speed
APPLICATIONS
·Switching regulator and high voltage switching applications
·High speed DC-DC converter applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
VCBO
VCEO
VEBO
www.iscsemi.cn PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
VALUE UNIT
900
V
800
V
7
V
IC
Collector Current-Continuous
4
A
ICM
Collector Current-Peak
8
A
IBB
Base Current-Continuous
2
A
IBM
Base Current-Peak
Collector Power Dissipation
PC
@ TC=25℃
TJ
Junction Temperature
5
A
80
W
150
℃
Tstg
Storage Temperature Range
-55~150
℃
isc Website：www.iscsemi.cn
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