2SC3680 查看數據表（PDF） - Inchange Semiconductor
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2SC3680 Datasheet PDF : 4 Pages
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Inchange Semiconductor
Silicon NPN Power Transistors
Product Specification
2SC3680
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
V(BR)CEO Collector-emitter breakdown voltage IC=10mA ;IB=0
800
V
VCEsat Collector-emitter saturation voltage IC=3A ,IB=0.6A
0.5
V
VBEsat Base-emitter saturation voltage
ICBO
Collector cut-off current
IEBO
Emitter cut-off current
IC=3A ;IB=0.6A
VCB=800V; IE=0
VEB=7V; IC=0
1.2
V
100 μA
100 μA
hFE
DC current gain
IC=3A ; VCE=4V
10
30
Cob
Output capacitance
IE=0 ; VCB=10V;f=1MHz
105
pF
fT
Transition frequency
固IN电C半H导AN体GE SEMICONDUCTOR Switching times
ton
Turn-on time
tstg
Storage time
tf
Fall time
IC=2A ; VCE=12V
IC=3A;IB1=0.45A;
IB2=-1.5A;RL=83Ω
VCC=250V
6
MHz
1.0
μs
5.0
μs
1.0
μs
2
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