2SC3688 查看數據表（PDF） - Inchange Semiconductor
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2SC3688 Datasheet PDF : 4 Pages
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Inchange Semiconductor
Silicon NPN Power Transistors
Product Specification
2SC3688
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
VCEO(SUS) Collector-emitter sustaining voltage IC=0.1A ;IB=0A
800
V
VCEsat Collector-emitter saturation voltage IC=8A ; IB=2.0A
5.0
V
VBEsat Base-emitter saturation voltage
IC=8A ; IB=2.0A
1.5
V
ICES
Collector cut-off current
VCE=1500V; RBE=0V
1.0
mA
IEBO
Emitter cut-off current
VEB=4V; IC=0A
1.0
mA
hFE
DC current gain
IC=1A ; VCE=5V
8
Switching times
固IN电C半H导AN体GE SEMICONDUCTOR ts
Storage time
IC=6.0A
3.0
IB1=1.2A;IB2=-2.4A
tf
Fall time
VCC=200V
0.2
μs
μs
2
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