C3723 查看數據表（PDF） - Inchange Semiconductor
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C3723 Datasheet PDF : 4 Pages
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Inchange Semiconductor
Silicon NPN Power Transistors
Product Specification
2SC3723
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
V(BR)CEO Collector-emitter breakdown voltage IC=10mA ; IB=0
400
V
V(BR)CBO Collector-base breakdown voltage
IC=1mA ; IE=0
450
V
V(BR)EBO Emitter-base breakdown voltage
IE=1mA ; IC=0
10
V
VCEsat Collector-emitter saturation voltage IC=2A; IB=0.4A
0.8
V
VBEsat Base-emitter saturation voltage
IC=2A; IB=0.4A
1.2
V
ICBO
Collector cut-off current
VCB=450V ;IE=0
100 μA
IEBO
Emitter cut-off current
VEB=10V; IC=0
100 μA
固IN电C半H导AN体GE SEMICONDUCTOR hFE
DC current gain
Switching times
ton
Turn-on time
ts
Storage time
IC=2 A ; VCE=5V
IC=4A; IB1=0.8A
IB2=-1.6A;RL=37.5Ω
10
1.0
2.5
μs
μs
tf
Fall time
0.5 μs
2
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