2SC3795B 查看數據表（PDF） - Inchange Semiconductor
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2SC3795B Datasheet PDF : 3 Pages
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Inchange Semiconductor
Silicon NPN Power Transistors
Product Specification
2SC3795B
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
VCEO(SUS) Collector-emitter sustaining voltage IC=0.2A , L=25mH
600
V
VCEsat Collector-emitter saturation voltage IC=3A; IB=0.6A
1.0
V
VBEsat Base-emitter saturation voltage
ICBO
Collector cut-off current
IEBO
Emitter cut-off current
IC=3A ;IB=0.6A
VCB=800V; IE=0
VEB=5V; IC=0
1.5
V
100 μA
100 μA
hFE-1
DC current gain
IC=0.1A ; VCE=5V
15
hFE-2
DC current gain
IC=3A ; VCE=5V
8
固IN电C半H导AN体GE SEMICONDUCTOR fT
Transition frequency
IC=0.5A ; VCE=10V
8
MHz
2
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