2SC3637 查看數據表（PDF） - Quanzhou Jinmei Electronic

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2SC3637

Silicon NPN Power Transistors

Quanzhou Jinmei Electronic 

JMnic

Silicon NPN Power Transistors

CHARACTERISTICS

Tj=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

VCEO(SUS) Collector-emitter sustaining voltage IC=100mA ; IB=0

VCEsat Collector-emitter saturation voltage IC=5A ;IB=1A

VBEsat Base-emitter saturation voltage

IC=5A ;IB=1A

ICBO

Collector cut-off current

VCB=500V; IE=0

ICES

Collector cut-off current

VCE=900V; RBE=0

IEBO

Emitter cut-off current

VEB=5V; IC=0

hFE

DC current gain

IC=1A ; VCE=5V

Switching times

ts

Storage time

tf

Fall time

VCC=200V;IC=5A;

IB1=1A; IB2=-2A

Product Specification

2SC3637

MIN TYP. MAX UNIT

500

V

2.0

V

1.5

V

10 μA

0.5 mA

1.0 mA

8

3.0 μs

0.1 0.2 μs

2

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