2SC3638 查看數據表（PDF） - Quanzhou Jinmei Electronic
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2SC3638 Datasheet PDF : 4 Pages
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JMnic
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-emitter sustaining voltage IC=100mA ; IB=0
VCEsat Collector-emitter saturation voltage IC=7A ;IB=1.4A
VBEsat Base-emitter saturation voltage
IC=7A ;IB=1.4A
ICBO
Collector cut-off current
VCB=500V; IE=0
ICES
Collector cut-off current
VCE=900V; RBE=0
IEBO
Emitter cut-off current
VEB=5V; IC=0
hFE
DC current gain
IC=1.4A ; VCE=5V
Switching times
ts
Storage time
tf
Fall time
VCC=200V;IC=7A;
IB1=1.4A; IB2=-2.8A
Product Specification
2SC3638
MIN TYP. MAX UNIT
500
V
2.0
V
1.5
V
10 μA
0.5 mA
1.0 mA
8
3.0 μs
0.1 0.2 μs
2
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