2SC3680 查看數據表（PDF） - Quanzhou Jinmei Electronic
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2SC3680 Datasheet PDF : 3 Pages
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Product Specification
Silicon NPN Power Transistors
www.jmnic.com
2SC3680
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
VCEO
Collector-emitter breakdown voltage IC=10mA ;IB=0
800
VCEsat Collector-emitter saturation voltage IC=3A ,IB=0.6A
VBEsat Base-emitter saturation voltage
IC=3A ;IB=0.6A
ICBO
Collector cut-off current
VCB=800V; IE=0
IEBO
Emitter cut-off current
VEB=7V; IC=0
hFE
DC current gain
IC=3A ; VCE=4V
10
Cob
Output capacitance
IE=0 ; VCB=10V;f=1MHz
fT
Transition frequency
IC=2A ; VCE=12V
Switching times
ton
Turn-on time
tstg
Storage time
tf
Fall time
IC=3A;IB1=0.45A;
IB2=-1.5A;RL=83Ω
VCC=250V
TYP.
105
6
MAX
0.5
1.2
100
100
30
UNIT
V
V
V
μA
μA
pF
MHz
1.0
μs
5.0
μs
1.0
μs
JMnic
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