2SC3835G 查看數據表（PDF） - Inchange Semiconductor
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2SC3835G Datasheet PDF : 3 Pages
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INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2SC3835G
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 50mA ; IB= 0
120
V
VCE(sat) Collector-Emitter Saturation Voltage IC= 3A; IB=B 0.3A
0.5
V
VBE(sat) Base-Emitter Saturation Voltage
ICBO
Collector Cutoff Current
IEBO
Emitter Cutoff Current
IC= 3A; IB=B 0.3A
VCB= 200V; IE= 0
VEB= 8V; IC= 0
1.2
V
100 μA
100 μA
hFE
DC Current Gain
IC= 3A ; VCE= 4V
160
www.iscsemi.cn fT
Current-Gain—Bandwidth Product
IE= -0.5A ; VCE= 12V
30
COB
Output Capacitance
Switching times
IE=0 ; VCB=10V;ftest=1.0MHz
110
ton
Turn-on Time
tstg
Storage Time
IC= 3A ;IB1=0.3A; IB2= -0.6A
RL= 16.7Ω; VCC= 50V
tf
Fall Time
220
MHz
pF
0.5 μs
3.0 μs
0.5 μs
isc Website：www.iscsemi.cn
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