2SC4107 查看數據表（PDF） - Inchange Semiconductor
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2SC4107 Datasheet PDF : 4 Pages
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Inchange Semiconductor
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=5mA ; RBE=∞
V(BR)CBO Collector-base breakdown voltage
IC=1mA ; IE=0
V(BR)EBO Emitter-base breakdown voltage
IE=1mA ; IC=0
VCEsat Collector-emitter saturation voltage IC=6A; IB=1.2A
VBEsat Base-emitter saturation voltage
IC=6A; IB=1.2A
ICBO
Collector cut-off current
VCB=400V ;IE=0
IEBO
Emitter cut-off current
VEB=5V; IC=0
hFE-1
DC current gain
IC=1.2A ; VCE=5V
hFE-2
DC current gain
IC=6A ; VCE=5V
hFE-3
DC current gain
IC=10mA ; VCE=5V
fT
Transition frequency
IC=1.2A ; VCE=10V
COB
Collector output capacitance
f=1MHz ; VCB=10V
Switching times
ton
Turn-on time
tstg
Storage time
tf
Fall time
IC=7A;IB1=1.4A;
IB2=-2.8A;RL=28.6Ω
VCC=200V
hFE-1 classifications
L
M
N
15-30 20-40 30-50
Product Specification
2SC4107
MIN TYP. MAX UNIT
400
V
500
V
7
V
0.8
V
1.5
V
10
μA
10
μA
15
50
10
10
20
MHz
120
pF
0.5
μs
2.5
μs
0.3
μs
2
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