2SC4130 查看數據表（PDF） - Inchange Semiconductor
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2SC4130 Datasheet PDF : 4 Pages
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Inchange Semiconductor
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=25mA ; IB=0
VCEsat Collector-emitter saturation voltage IC=3A ;IB=0.6A
VBEsat Base-emitter saturation voltage
IC=3A ;IB=0.6A
ICBO
Collector cut-off current
VCB=500V; IE=0
IEBO
Emitter cut-off current
VEB=10V; IC=0
hFE
DC current gain
IC=3A ; VCE=4V
COB
Output capacitance
IE=0; VCB=10V;f=1MHz
fT
Transition frequency
IE=-0.5A ; VCE=12V
Switching times
ton
Turn-on time
ts
Storage time
tf
Fall time
IC=3A; IB1=0.3A
IB2=-0.6A
VCC=200V ,RL=67Ω
Product Specification
2SC4130
MIN TYP. MAX UNIT
400
V
0.5
V
1.3
V
100 μA
100 μA
10
30
50
pF
15
MHz
1.0
μs
2.2
μs
0.5
μs
2
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