2SC4131 查看數據表（PDF） - Inchange Semiconductor
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2SC4131 Datasheet PDF : 2 Pages
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INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2SC4131
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 50V(Min)
·Low Collector Saturation Voltage-
: VCE(sat)= 0.5V(Max)@ IC= 5A
APPLICATIONS
·Designed for DC-DC converter, emergency lighting
inverter and general purpose applications
www.iscsemi.cn ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
100
V
VCEO
Collector-Emitter Voltage
50
V
VEBO
Emitter-Base Voltage
15
V
IC
Collector Current-Continuous
15
A
ICP
Collector Current-Peak
25
A
IBB
Base Current-Continuous
Collector Power Dissipation
PC
@ TC=25℃
TJ
Junction Temperature
4
A
60
W
150
℃
Tstg
Storage Temperature Range
-55~150
℃
isc Website：www.iscsemi.cn
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