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2SC4131 查看數據表(PDF) - Inchange Semiconductor

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2SC4131
Iscsemi
Inchange Semiconductor Iscsemi
2SC4131 Datasheet PDF : 2 Pages
1 2
INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2SC4131
ELECTRICAL CHARACTERISTICS
TC=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 25mA; IB= 0
50
V
VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB=B 80mA
VBE(sat) Base-Emitter Saturation Voltage
IC= 5A; IB=B 80mA
ICBO
Collector Cutoff Current
VCB= 100V ; IE= 0
IEBO
Emitter Cutoff Current
VEB= 15V ; IC= 0
0.5
V
1.2
V
10
μA
10
μA
www.iscsemi.cn hFE
DC current gain
fT
Current-Gain—Bandwidth Product
COB
Output Capacitance
Switching times
ton
Turn-on Time
IC= 5A ; VCE= 1V
60
IE= -1A ; VCE= 12V
18
IE=0 ; VCB= 10V; ftest= 1.0MHz
210
0.5
360
MHz
pF
μs
tstg
Storage Time
IC= 5A , IB1= 80mA; IB2= -80mA
RL= 4Ω; VCC= 20V
2.0
μs
tf
Fall Time
0.4
μs
isc Websitewww.iscsemi.cn
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