2SC4153 查看數據表（PDF） - Inchange Semiconductor
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2SC4153 Datasheet PDF : 4 Pages
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Inchange Semiconductor
Silicon NPN Power Transistors
Product Specification
2SC4153
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
V(BR)CEO Collector-emitter breakdown voltage IC=50mA ;IB=0
120
V
VCEsat Collector-emitter saturation voltage IC=3A ;IB=0.3A
0.5
V
VBEsat Base-emitter saturation voltage
IC=3A; IB=0.3A
1.2
V
ICBO
Collector cut-off current
VCB=200V; IE=0
0.1 mA
IEBO
Emitter cut-off current
VEB=8V; IC=0
0.1 mA
hFE-1
DC current gain
IC=0.6A ; VCE=4V
70
250
hFE-2
DC current gain
IC=3A ; VCE=4V
70
220
fT
Transition frequency
IE=-0.5A ; VCE=12V
30
MHz
COB
Collector output capacitance
固IN电C半H导AN体GE SEMICONDUCTOR Switching times
ton
Turn-on time
ts
Storage time
tf
Fall time
f=1MHz;VCB=10V
IC=3A
IB1=0.3A ,IB2=-0.6A
VCC=50V, RL=16.7Ω
110
0.5
3.0
0.5
pF
μs
μs
μs
2
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