2SC4420 查看數據表（PDF） - Panasonic Corporation
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2SC4420 Datasheet PDF : 4 Pages
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Power Transistors
2SC4420
Silicon NPN triple diffusion planar type
For high breakdown voltage high-speed switching
■ Features
• High-speed switching
• High collector-base voltage (Emitter open) VCBO
• Wide safe operation area
• Satisfactory linearity of forward current transfer ratio hFE
• Full-pack package which can be installed to the heat sink with one screw
■ Absolute Maximum Ratings TC = 25°C
Parameter
Symbol Rating
Unit
Collector-base voltage (Emitter open) VCBO
900
V
Collector-emitter voltage (E-B short) VCES
900
V
Collector-emitter voltage (Base open) VCEO
800
V
Emitter-base voltage (Collector open) VEBO
7
V
Base current
IB
1
A
Collector current
IC
3
A
Peak collector current
ICP
5
A
Collector power dissipation
PC
70
W
Ta = 25°C
3.0
Junction temperature
Tj
150
°C
Storage temperature
Tstg −55 to +150 °C
15.0±0.3
11.0±0.2
Unit: mm
5.0±0.2
(3.2)
φ 3.2±0.1
2.0±0.2
1.1±0.1
2.0±0.1
0.6±0.2
5.45±0.3
10.9±0.5
123
1: Base
2: Collector
3: Emitter
EIAJ: SC-92
TOP-3F-A1 Package
■ Electrical Characteristics TC = 25°C ± 3°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Collector-emitter voltage (Base open)
Collector-base cutoff current (Emitter open)
Emitter-base cutoff current (Collector open)
Forward current transfer ratio
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time
VCEO
ICBO
IEBO
hFE1
hFE2
VCE(sat)
VBE(sat)
fT
ton
tstg
tf
IC = 10 mA, IB = 0
VCB = 900 V, IE = 0
VEB = 7 V, IC = 0
VCE = 5 V, IC = 0.1 A
VCE = 5 V, IC = 0.8 A
IC = 0.8 A, IB = 0.16 A
IC = 0.8 A, IB = 0.16 A
VCE = 5 V, IC = 0.15 A, f = 1 MHz
IC = 0.8 A
IB1 = 0.16 A, IB2 = − 0.32 A
VCC = 250 V
800
V
50
µA
50
µA
8
6
1.5
V
1.5
V
10
MHz
0.7
µs
2.5
µs
0.3
µs
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Publication date: February 2003
SJD00128BED
1
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