2SC4539 查看數據表（PDF） - Toshiba
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2SC4539 Datasheet PDF : 5 Pages
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TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process)
2SC4539
Power Amplifier Applications
Power Switching Applications
2SC4539
Unit: mm
· Low saturation voltage: VCE (sat) = 0.5 V (max) (IC = 700 mA)
· High speed switching time: tstg = 0.3 µs (typ.)
· Small flat package
· PC = 1.0 to 2.0 W (mounted on ceramic substrate)
· Complementary to 2SA1743
Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Collector power dissipation
VCBO
50
V
VCEO
30
V
VEBO
6
V
IC
1.2
A
IB
0.3
A
PC
500
mW
PC
1000
mW
(Note)
Junction temperature
Storage temperature range
Tj
150
°C
Tstg
−55 to 150
°C
Note: Mounted on ceramic substrate (250 mm2 × 0.8 t)
JEDEC
―
JEITA
SC-62
TOSHIBA
2-5K1A
Weight: 0.05 g (typ.)
1
2002-08-13
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