C4501 查看數據表（PDF） - Hitachi -> Renesas Electronics

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C4501

Silicon NPN Epitaxial

Hitachi -> Renesas Electronics 

2SC4501(L)/(S)

Absolute Maximum Ratings (Ta = 25°C)

Item

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

Collector current

Collector peak current

Collector power dissipation

Junction temperature

Storage temperature

Note: 1. Value at TC = 25°C.

Symbol

VCBO

VCEO

VEBO

IC

IC (peak)

PC*1

Tj

Tstg

Ratings

30

30

7

3

4

10

150

–55 to +150

Unit

V

V

V

A

A

W

°C

°C

Electrical Characteristics (Ta = 25°C)

Item

Symbol Min Typ

Collector to base breakdown V(BR)CBO 30

—

voltage

Collector to emitter breakdown V(BR)CEO 30

—

voltage

Emitter to base breakdown

V(BR)EBO

7

—

voltage

Collector cutoff current

DC current transfer ratio

Collector to emitter saturation

voltage

ICEO

hFE

VCE (sat)

—

—

2000 —

—

—

VCE (sat)

—

—

Base to emitter saturation

VBE (sat)

—

—

voltage

Turn on time

Turn off time

Storage time

Note: 1. Pulse test.

VBE (sat)

—

—

ton

—

0.4

toff

—

1.2

tstg

—

0.8

Max

—

Unit

V

Test conditions

IC = 0.1 mA, IE = 0

—

V

IC = 1 mA, RBE = _

—

V

IE = 0.1 mA, IC = 0

20

µA

50000

1.5 V

VCB = 24 V, RBE = _

VCE = 3 V, IC = 1.5 A*1

IC = 1.5 A, IB = 3 mA*1

2.0

2.0 V

IC = 3 A, IB = 30 mA*1

IC = 1.5 A, IB = 3 mA*1

3.5

—

µs

—

µs

—

µs

IC = 3 A, IB = 30 mA*1

IC = 1.5 A,

IB1 = –IB2 = 3 mA,

VCC = 30 V

2

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