2SC4331 查看數據表（PDF） - Renesas Electronics

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2SC4331

NPN SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING

Renesas Electronics 

TYPICAL CHARACTERISTICS (TA = 25°C)

With infinite heatsink

Ceramic board mounted,

7.5 cm2 × 0.7 mm

Ambient Temperature TA (°C)

Single pulse

Collector to Emitter Voltage VCE (V)

Pulse test

2SC4331,4331-Z

Case Temperature TC (°C)

Pulse Width PW (s)

Pulse test

Collector to Emitter Voltage VCE (V)

Collector Current IC (A)

Data Sheet D16136EJ3V0DS

3

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