2SC4303 查看數據表（PDF） - Inchange Semiconductor
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2SC4303 Datasheet PDF : 3 Pages
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Inchange Semiconductor
Silicon NPN Power Transistors
Product Specification
2SC4303
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
V(BR)CEO Collector-emitter breakdown voltage IC=10mA; IB=0
800
V
V(BR)EBO Emitter-base breakdown voltage
IE=1mA; IC=0
7
V
VCEsat Collector-emitter saturation voltage IC=2.5A;IB=0.5A
1.0
V
VBEsat Base-emitter saturation voltage
ICBO
Collector cut-off current
IEBO
Emitter cut-off current
IC=2.5A;IB=0.5A
VCB=1200V; IE=0
VEB=7V; IC=0
1.5
V
100 μA
100 μA
hFE
DC current gain
固IN电C半H导AN体GE SEMICONDUCTOR fT
Transition frequency
IC=2.5A ; VCE=4V
IE=0.5A ; VCE=12V
6
4
MHz
2
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