2SC4425 查看數據表（PDF） - Inchange Semiconductor
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2SC4425 Datasheet PDF : 2 Pages
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INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2SC4425
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CBO Collector-Base Breakdown Voltage
IC= 1mA; IE= 0
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA; RBE= ∞
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 1m A; IC= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 16A; IB= 3.2A
VBE(sat) Base-Emitter Saturation Voltage
IC= 16A; IB= 3.2A
ICBO
Collector Cutoff Current
VCB= 400V; IE= 0
IEBO
Emitter Cutoff Current
VEB= 5V; IC= 0
hFE-1
DC Current Gain
hFE-2
DC Current Gain
hFE-3
DC Current Gain
fT
Current-Gain—Bandwidth Product
IC= 3.2A; VCE= 5V
IC= 16A; VCE= 5V
IC= 10mA; VCE= 5V
IC= 3.2A; VCE= 10V
COB
Output Capacitance
Switching Times
IE= 0; VCB= 10V; ftest= 1.0MHz
ton
Turn-on Time
tstg
Storage Time
tf
Fall Time
IC= 20A, IB1= 4A; IB2= -8A;
RL= 10Ω; VCC= 200V
hFE-1 Classifications
L
M
N
15-30 20-40 30-50
MIN TYP. MAX UNIT
500
V
400
V
7
V
0.8
V
1.5
V
10 μA
10 μA
15
50
10
10
20
MHz
300
pF
0.5 μs
2.5 μs
0.3 μs
isc Website：www.iscsemi.cn
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