2SC4460L 查看數據表（PDF） - SavantIC Semiconductor
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2SC4460L Datasheet PDF : 4 Pages
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SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
2SC4460
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CBO Collector-base breakdown voltage
IC=1mA; IE=0
V(BR)CEO Collector-emitter breakdown voltage IC=5mA; RBE=<
V(BR)EBO Emitter-base breakdown voltage
VCEX(SUS) Collector-emitter sustaining voltage
VCEsat Collector-emitter saturation voltage
IE=1mA; IC=0
IC=5A;IB1=2A;
IB2=-2A;L=500µH
IC=6A;IB=1.2 A
VBEsat
Base-emitter saturation voltage
IC=6A;IB=1.2A
ICBO
Collector cut-off current
VCB=500V; IE=0
IEBO
Emitter cut-off current
VEB=5V; IC=0
hFE-1
DC current gain
IC=1.2A ; VCE=5V
hFE-2
DC current gain
IC=6A ; VCE=5V
fT
Transition frequency
IC=1.2A ; VCE=10V
COB
Output capacitance
VCB=10V;f=1MHz
Switching times
ton
Turn-on time
tstg
Storage time
tf
Fall time
IC=5IB1=-2.5IB2=7A;
RL=28.6D
VCC=200V
hFE-1 classifications
L
M
N
15-30
20-40
30-50
MIN TYP. MAX UNIT
800
V
500
V
7
V
500
V
1.0
V
1.5
V
10
µA
10
µA
15
50
8
18
MHz
160
pF
0.5
µs
3.0
µs
0.3
µs
2
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