SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
2SC4542
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=5mA ;IB=0
VCEsat Collector-emitter saturation voltage IC=7A; IB=1.7A
VBEsat
Base-emitter saturation voltage
IC=7A; IB=1.7A
ICBO
Collector cut-off current
IEBO
Emitter cut-off current
hFE
DC current gain
Cob
Collector output capacitance
VCB=1500V; IE=0
VEB=5V; IC=0
IC=1A ; VCE=5V
IE=0 ; VCB=10V,f=1MHz
fT
Transition frequency
IE=0.1A ; VCE=10V
Switching times resistive load
ts
Storage time
tf
Fall time
ICP=7A;IB1=1.4A
IB2=-2.8A; RL=28.5A
MIN TYP. MAX UNIT
600
V
5
V
1.5
V
1.0
mA
10
µA
8
15
210
pF
1
3
MHz
1.8
2.5
µs
0.1
0.2
µs
2