AS6VA25616-TI 查看數據表（PDF） - Alliance Semiconductor

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AS6VA25616-TI

2.7V to 3.3V 256K × 16 Intelliwatt™ low-power CMOS SRAM with one chip enable

Alliance Semiconductor 

AS6VA25616

®

Write cycle (over the operating range)11

Parameter

Symbol

Min

Write cycle time

Chip select to write end

Address setup to write end

Address setup time

Write pulse width

Address hold from end of write

Data valid to write end

Data hold time

Write enable to output in high Z

Output active from write end

UB/LB low to end of write

tWC

55

tCW

40

tAW

40

tAS

0

tWP

35

tAH

0

tDW

25

tDH

0

tWZ

0

tOW

5

tBW

35

Shaded areas indicate preliminary information.

Max

Unit

–

ns

–

ns

–

ns

–

ns

–

ns

–

ns

–

ns

–

ns

20

ns

–

ns

–

ns

Write waveform 1 (WE controlled)10,11

Address

CS

LB, UB

tAS

WE

tWC

tCW

tBW

tAW

DIN

DOUT

tWZ

Data undefined

tAH

tWP

tDW

tDH

Data valid

tOW

High Z

Write waveform 2 (CS controlled)10,11

Address

CS

LB, UB

WE

DIN

DOUT

tAS

tCLZ

High Z

tWC

tCW

tAW

tBW

tWP

tDW

tWZ

Data undefined

tAH

tDH

Data valid

tOW

High Z

Notes

12

12

4, 5

4, 5

4, 5

10/6/00

ALLIANCE SEMICONDUCTOR

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