2SC4596 查看數據表（PDF） - Inchange Semiconductor

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2SC4596

Silicon NPN Power Transistor

Inchange Semiconductor 

INCHANGE Semiconductor

isc Silicon NPN Power Transistor

isc Product Specification

2SC4596

DESCRIPTION

·Low Collector Saturation Voltage

: VCE(sat)= 0.3V(Max)@ IC= 3A

·Collector-Emitter Sustaining Voltage-

: VCEO(SUS)= 60V (Min)

·Complement to Type 2SA1757

APPLICATIONS

·Designed for high speed and power switching applications

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO

Collector-Base Voltage

100

V

VCEO

Collector-Emitter Voltage

60

V

VEBO

Emitter-Base Voltage

5

V

IC

Collector Current-Continuous

5

A

ICM

Collector Current-Peak

Collector Power Dissipation

@ TC=25℃

PC

Collector Power Dissipation

@ Ta=25℃

TJ

Junction Temperature

10

A

25

W

2

150

℃

Tstg

Storage Temperature Range

-55~150

℃

isc Website：www.iscsemi.cn

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