2SC4597 查看數據表（PDF） - TY Semiconductor

零件编号

产品描述 (功能)

生产厂家

2SC4597

Silicon NPN Triple Diffused Type

TY Semiconductor 

SMD Type

Electrical Characteristics Ta = 25

Parameter

Collector cut-off current

Emitter cut-off current

DC current gain

Gain-Bandwidth product

Output Capacitance

Collector-emitter saturation voltage

Base-emitter saturation voltage

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-to-Base Breakdown Voltage

Collector-to-Emitter Sustain Voltage

Turn-ON time

Storage time

Fall time

Symbol

Testconditons

ICBO

VCB = 400 V, IE = 0

IEBO

VEB = 5 V, IC = 0

VCE = 5 V, IC = 0.4A

hFE

VCE = 5 V, IC = 2A

VCE = 5 V, IC =10mA

fT

VCE = 10 V, IC =0.4A

Cob VCB=10V,f=1MHz

VCE (sat) IC = 2 A, IB = 0.4 A

VBE (sat) IC = 2 A, IB = 0.4 A

V (BR) CBO IC = 1 mA, IE = 0

V (BR) CEO IC = 5 mA,RBE=

V(BR)EBO IE=1mA,IC=0

VCEX(SUS) IC=2A,IB1=0.2A,L=1mH,IB2=-0.8A

ton

tstg

IC=3A,IB1=0.6A,IB2=-1.2A,RL=66.6

Ù,VCC=200V

tf

Transistors

Product specification

2SC4597

Min Typ Max Unit

10 ìA

10 ìA

15

50

10

10

20

MHz

50

pF

0.8 V

1.5 V

500

V

400

V

7

400

0.5

2.5 ìs

0.3

Switching Time Test Circuit

hFE Classification

Rank

hFE

L

15 to 30

M

20 to 40

N

30 to 50

http://www.twtysemi.com

sales@twtysemi.com

4008-318-123

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