C4881 查看數據表（PDF） - Toshiba

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C4881

TOSHIBA Transistor Silicon NPN Epitaxial Type

Toshiba 

TOSHIBA Transistor Silicon NPN Epitaxial Type

2SC4881

High-Current Switching Applications

2SC4881

Unit: mm

• Low saturation voltage: VCE (sat) = 0.4 V (max)

• High-speed switching: tstg = 0.8 µs (typ.)

Maximum Ratings (Tc = 25°C)

Characteristics

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

DC

Pulse

Base current

Collector power

dissipation

Ta = 25°C

Tc = 25°C

Junction temperature

Storage temperature range

Symbol

VCBO

VCEO

VEBO

IC

ICP

IB

PC

Tj

Tstg

Rating

Unit

60

V

50

V

5

V

5

A

8

1

A

2.0

W

20

150

°C

−55 to 150

°C

Electrical Characteristics (Tc = 25°C)

JEDEC

―

JEITA

―

TOSHIBA

2-10R1A

Weight: 1.7 g (typ.)

Characteristics

Collector cut-off current

Emitter cut-off current

Collector-emitter breakdown voltage

DC current gain

Collector-emitter saturation voltage

Base-emitter saturation voltage

Transition frequency

Collector output capacitance

Symbol

Test Condition

ICBO

IEBO

V (BR) CEO

hFE (1)

hFE (2)

VCE (sat)

VBE (sat)

fT

Cob

VCB = 50 V, IE = 0

VEB = 6 V, IC = 0

IC = 10 mA, IB = 0

VCE = 1 V, IC = 1 A

VCE = 1 V, IC = 2.5 A

IC = 2.5 A, IB = 125 mA

IC = 2.5 A, IB = 125 mA

VCB = 4 V, IC = 1 A

VCB = 10 V, IE = 0, f = 1 MHz

Min Typ. Max Unit

―

―

1

µA

―

―

1

µA

50

―

―

V

100 ― 320

60

―

―

― 0.25 0.4

V

―

1.0 1.3

V

― 100 ― MHz

―

45

―

pF

Turn-on time

Switching time Storage time

Fall time

ton

Output

―

0.1

―

20 µs Input IB1

tstg

IB2

―

0.8

―

µs

VCC = 30 V

tf

―

0.1

―

IB1 = −IB2 = 125 mA, duty cycle ≤ 1%

1

2004-07-26

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