2SC5001TL 查看數據表（PDF） - ROHM Semiconductor
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2SC5001TL Datasheet PDF : 3 Pages
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Transistors
2SC5001
zElectrical characteristics (Ta=25°C)
10 Ta=25°C
45mA
40mA
35mA
8
30mA
25mA
6
20mA
4
15mA
10mA
2
5mA
IB=0mA
0
1
2
COLLECTOR TO VOLTAGE : VCE (V)
Fig.1 Ground emitter output characteristics
10
5
2
Ta=125°C
1
25°C
500m
−40°C
VCE=2V
200m
100m
50m
20m
10m
5m
2m
1m
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
BASE TO EMITTER VOLTAGE : VBE(on) (V)
Fig.2 Ground emitter propagation
characteristics
10000
5000
Ta=25°C
2000
1000
500
VCE=5V
200
2V
100
1V
50
20
10
20m 50m 100m 200m 500m 1 2 5 10 20
COLLECTOR CURRENT : IC (A)
Fig.3 DC current gain vs. collector current
1000
Ta=25°C
500
200
100
50
IC/IB=80
20
50
10
20
5
2
1
10m 20m 50m 100m 200m 500m 1 2 5 10 20
COLLECTOR CURRENT : IC (A)
Fig.4 Collector-emitter saturation voltage
vs. collector current
1000
Ta=25°C
500
f=50MHz
VCE=5V
200
100
50
20
10
5
2
1
−10m
−100m
−1
−10
EMITTER CURRENT : IE (A)
Fig.5 Gain bandwidth product
vs. emitter current
10000
Ta=25°C
5000
f=1MHz
IE=0A
2000
1000
500
200
100
50
20
10
0.05 0.1 0.2
0.5 1 2
5 10 20 50
COLLECTOR TO BASE VOLTAGE : VCB (V)
Fig.6 Collector output capacitance
vs. collector-base voltage
100
Ta=25°C
50
20
10
5
2
1
DC
500m
200m
100m
50m
20m
10m
0.01 0.02 0.05 0.1 0.2 0.5 1 2
5 10 20 50 100
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
Fig.7 Safe operating area
Rev.A
2/2
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