2SC5025 查看數據表（PDF） - Hitachi -> Renesas Electronics
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2SC5025 Datasheet PDF : 3 Pages
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2SC5025
Silicon NPN Epitaxial
Application
High frequency amplifier
Features
• Excellent high frequency characteristics
fT = 1.2 GHz typ
• Low output capacitance
Cob = 5.0 pF typ
TO–126FM
123
1. Emitter
2. Collector
3. Base
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Rating
Unit
———————————————————————————————————————————
Collector to base voltage
VCBO
30
V
———————————————————————————————————————————
Collector to emitter voltage
VCEO
20
V
———————————————————————————————————————————
Emitter to base voltage
VEBO
3.5
V
———————————————————————————————————————————
Collector current
IC
0.3
A
———————————————————————————————————————————
Collector peak current
ic(peak)
0.5
A
———————————————————————————————————————————
Collector power dissipation
PC
1
W
———————————————————————————————————————————
Collector power dissipation
PC*1
5
W
———————————————————————————————————————————
Junction temperature
Tj
150
°C
———————————————————————————————————————————
Storage temperature
Tstg
–55 to +150
°C
———————————————————————————————————————————
Note: 1. Value at TC = 25°C.
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