2SC5025 查看數據表（PDF） - Hitachi -> Renesas Electronics

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2SC5025

Silicon NPN Epitaxial

Hitachi -> Renesas Electronics 

2SC5025

Electrical Characteristics (Ta = 25°C)

Item

Symbol

Min

Typ

Max

Unit Test Conditions

———————————————————————————————————————————

Collector to emitter

V(BR)CEO

20

—

—

V

IC = 10 mA,

breakdown voltage

RBE = ∞

———————————————————————————————————————————

Collector cutoff current

ICBO

—

—

1.0

mA VCB = 25 V,

IE = 0

———————————————————————————————————————————

Emitter cutoff current

IEBO

—

—

1.0

mA VEB = 3 V,

IC = 0

———————————————————————————————————————————

DC current

hFE

40

—

200

VCE = 5 V,

transfer ratio

IC = 50 mA

———————————————————————————————————————————

Base to emitter voltage

VBE

—

—

1.2

V

VCE = 5 V,

IC = 300 mA

———————————————————————————————————————————

Collector to emitter

VCE(sat)

—

—

2.0

V

IC = 300 mA,

saturation voltage

IB = 60 mA

———————————————————————————————————————————

Gain bandwidth product

fT

—

1.2

—

GHz VCE = 5 V,

IC = 100 mA

———————————————————————————————————————————

Collector output capacitance Cob

—

5.0

—

pF

VCB = 10 V,

IE = 0,

f = 1 MHz

———————————————————————————————————————————

Input capacitance

Cib

—

10

—

pF

VEB = 2 V,

IC = 0,

f = 1 MHz

———————————————————————————————————————————

See characteristic curves of 2SC3652.

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