2SC5027 查看數據表（PDF） - Unisonic Technologies
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2SC5027 Datasheet PDF : 4 Pages
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2SC5027
NPN SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATINGS (Tc = 25℃)
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-Base Voltage
VCBO
850
V
Collector-Emitter Voltage
VCEO
800
V
Collector-Emitter Voltage
VEBO
7
V
Peak Collector Current
IC
3
A
Collector Current (Pulse)
ICP
10
A
Base Current
IB
1.5
A
Power Dissipation
Junction Temperature
Storage Temperature
PC
50
W
TJ
150
℃
TSTG
-55 ~ +150
℃
Note Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (TC= 25℃, unless otherwise specified.)
PARAMETER
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector-Emitter sustaining Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Output Capacitance
Current Gain Bandwidth Product
Turn ON Time
Storage Time
Fall Time
SYMBOL
BVCBO
BVCEO
BVEBO
VCEX(SUS)
ICBO
IEBO
hFE1
hFE 2
VCE (SAT)
VBE (SAT)
Cob
fT
tON
tS
tF
TEST CONDITIONS
IC=1mA, IE=0
IC=5mA, IB=0
IE=1mA, IC=0
IC=1.5A, IB1= -IB2=0.3A
L=2mH, Clamped
VCB=800V, IE=0
VEB=5V, IC=0
VCE=5V, IC=0.2A
VCE=5V, IC=1A
IC=1.5A, IB=0.3A
IC=1.5A, IB=0.3A
VCB=10V, f=1MHz, IE=0
VCE=10V, IC=0.2A
VCC=400V
IC=5IB1= -2.5IB2=2A
RL=200Ω
CLASSIFICATION of hFE1
RANK
RANGE
N
10 ~ 20
R
15 ~ 30
MIN TYP MAX UNIT
850
V
800
V
7
V
800
V
10 µA
10 µA
10
40
8
2
V
1.5 V
60
pF
15
MHz
0.5 µs
3
µs
0.3 µs
O
20 ~ 40
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 4
QW-R203-027,C
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