C5027E 查看數據表（PDF） - Unisonic Technologies

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C5027E

HIGH VOLTAGE AND HIGH RELIABILITY TRANSISTOR

Unisonic Technologies 

2SC5027E

NPN SILICON TRANSISTOR

„ ABSOLUATE MAXIUM RATINGS (TC = 25℃)

PARAMETER

SYMBOL

RATINGS

UNIT

Collector-Base Voltage

VCBO

750

V

Collector-Emitter Voltage

VCEO

700

V

Collector-Emitter Voltage

VEBO

7

V

Peak Collector Current

IC

3

A

Collector Current (Pulse)

ICP

10

A

Base Current

IB

1.5

A

TO-220/TO-220F

Power Dissipation

TO-220F2

Junction Temperature

Storage Temperature

PD

TJ

TSTG

50

W

52

150

℃

-40 ~ +150

℃

Note Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

„ ELECTRICAL CHARACTERISTICS (TC= 25℃, unless otherwise specified.)

PARAMETER

Collector-Base Breakdown Voltage

Collector-Emitter Breakdown Voltage

Emitter-Base Breakdown Voltage

Collector-Emitter sustaining Voltage

Collector Cut-off Current

Emitter Cut-off Current

DC Current Gain

Collector-Emitter Saturation Voltage

Base-Emitter Saturation Voltage

Output Capacitance

Current Gain Bandwidth Product

Turn ON Time

Storage Time

Fall Time

SYMBOL

BVCBO

BVCEO

BVEBO

VCEO(SUS)

ICBO

IEBO

hFE1

hFE 2

VCE (SAT)

VBE (SAT)

COB

fT

tON

tS

tF

TEST CONDITIONS

IC=1mA, IE=0

IC=5mA, IB=0

IE=1mA, IC=0

IC=1.5A, IB1= -IB2=0.3A

L=2mH, Clamped

VCB=750V, IE=0

VEB=5V, IC=0

VCE=5V, IC=0.2A

VCE=5V, IC=1A

IC=1.5A, IB=0.3A

IC=1.5A, IB=0.3A

VCB=10V, f=1MHz, IE=0

VCE=10V, IC=0.2A

VCC=400V

IC=5IB1= -2.5IB2=2A

RL=200Ω

„ CLASSIFICATION of hFE1

MIN TYP MAX UNIT

750

V

700

V

7

V

700

V

10 μA

10 μA

10

40

8

2

V

1.5 V

60

pF

15

MHz

0.5 μs

3

μs

0.3 μs

CLASSIFICATION

RANGE

N

10 ~ 20

R

15 ~ 30

O

20 ~ 40

UNISONIC TECHNOLOGIES CO., LTD

www.unisonic.com.tw

2 of 4

QW-R203-030.C

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