2SC4880 查看數據表（PDF） - Inchange Semiconductor
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2SC4880 Datasheet PDF : 3 Pages
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Inchange Semiconductor
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR )CEO Collector-emitter breakdown voltage IC=10mA; RBE=∞
V(BR )EBO Emitter-base breakdown voltage
IE=1mA; IC=0
VCEsat Collector-emitter saturation voltage IC=10A; IB=2.5 A
VBEsat Base-emitter saturation voltage
IC=10A; IB=2.5 A
ICES
Collector cut-off current
VCE=1700V;RBE=0
IEBO
Emitter cut-off current
VEB=5V; IC=0
hFE
DC current gain
IC=1A ; VCE=5V
Product Specification
2SC4880
MIN TYP. MAX UNIT
900
V
5
V
5.0
V
1.5
V
500 μA
100 μA
8
40
2
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