C5008 查看數據表（PDF） - Renesas Electronics
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C5008 Datasheet PDF : 12 Pages
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2SC5008
ELECTRICAL CHARACTERISTICS (TA = 25 ˚C)
CHARACTERISTIC
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain Bandwidth Product
Feed-back Capacitance
Insertion Power Gain
Noise Figure
SYMBOL
ICBO
IEBO
hFE
fT
Cre
|S21e|2
NF
MIN.
80
5.5
5.5
TYP.
8.0
0.3
7.5
1.9
MAX.
1.0
1.0
160
0.7
3.2
UNIT
µA
µA
GHz
pF
dB
dB
TEST CONDITIONS
VCB = 10 V, IE = 0
VEB = 1 V, IC = 0
VCE = 3 V, IC = 5 mA*1
VCE = 3 V, IC = 5 mA
VCB = 3 V, IE = 0, f = 1 MHz*2
VCE = 3 V, IC = 5 mA, f = 2 GHz
VCE = 3 V, IC = 5 mA, f = 2 GHz
*1 Pulse Measurement PW ≤ 350 µs, Duty Cycle ≤ 2 %
*2 The emitter terminal and the case shall be connected to the guard terminal of the three-terminal capacitance
bridge.
hFE Classification
RANK
Marking
hFE
FB
44
80 to 160
2
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