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2SC5195 查看數據表(PDF) - NEC => Renesas Technology

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2SC5195 Datasheet PDF : 10 Pages
1 2 3 4 5 6 7 8 9 10
TYPICAL CHARACTERISTICS (TA = 25 °C)
TOTAL POWER DISSIPATION
vs. AMBIENT TEMPERATURE
150
Free Air
100
50
0
50
100
150
Ambient Temperature TA (°C)
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
30
200 µA
25
180 µA
160 µA
20
140 µA
120 µA
15
100 µA
10
80 µA
60 µA
5
40 µA
IB = 20 µA
0
2.5
5
7
Collector to Emitter Voltage VCE (V)
GAIN BANDWIDTH PRODUCT
vs. COLLECTOR CURRENT
VCE = 1 V
f = 2 GHz
10
5
0
1
23
5 7 10
20
Collector Current IC (mA)
2SC5195
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
100
VCE = 1 V
10
1
0.1
0.01
0
0.5
1
Base to Emitter Voltage VBE (V)
DC CURENT GAIN vs.
COLLECTOR CURRENT
200
VCE = 1 V
100
0
0.1 0.2
0.5 1 2 5 10 20
Collector Current IC (mA)
50 100
INSERTION GAIN vs.
COLLECTOR CURRENT
VCE = 1 V
f = 2 GHz
10
5
0
1
23
5 7 10
20
Collector Current IC (mA)
3

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