2SC5379 查看數據表（PDF） - Panasonic Corporation

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2SC5379

Silicon NPN epitaxial planar type Transistors

Panasonic Corporation 

Transistors

2SC5379

Silicon NPN epitaxial planar type

For low-voltage low-noise high-frequency oscillation

■ Features

• Low noise figure NF

• High forward transfer gain S21e2

• High transition frequency fT

• SS-Mini type package, allowing downsizing of the equipment

and automatic insertion through the tape packing

■ Absolute Maximum Ratings Ta = 25°C

Parameter

Symbol Rating

Unit

Collector-base voltage (Emitter open) VCBO

15

V

Collector-emitter voltage (Base open) VCEO

8

V

Emitter-base voltage (Collector open) VEBO

2

V

Collector current

IC

80

mA

Collector power dissipation

PC

125

mW

Junction temperature

Tj

125

°C

Storage temperature

Tstg −55 to +125 °C

0.2+–00..015

3

Unit: mm

0.15+–00..015

1

2

(0.5) (0.5)

1.0±0.1

1.6±0.1

5˚

1: Base

2: Emitter

3: Collector

EIAJ: SC-75

SSMini3-G1 Package

Marking Symbol: HT

■ Electrical Characteristics Ta = 25°C ± 3°C

Parameter

Symbol

Conditions

Min Typ Max Unit

Collector-base cutoff current (Emitter open) ICBO VCB = 10 V, IE = 0

Emitter-base cutoff current (Collector open) IEBO VEB = 1 V, IC = 0

Forward current transfer ratio *

hFE VCE = 5 V, IC = 10 mA

Transition frequency

fT

VCE = 5 V, IC = 10 mA, f = 2 GHz

Collector output capacitance

(Common base, input open circuited)

Cob VCB = 5 V, IE = 0, f = 1 MHz

1

µA

1

µA

80

200



7.0

GHz

0.6 1.0

pF

Forward transfer gain

Noise figure

S21e2 VCE = 5 V, IC = 10 mA, f = 1 GHz

NF VCE = 5 V, IC = 3 mA, f = 1 GHz

8.5 11.0

dB

1.6 2.0

dB

Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.

2. *: Rank classification

Rank

Q

R

S

hFE

80 to 115

95 to 155 135 to 200

Publication date: February 2003

SJC00180BED

1

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