2SC5480 查看數據表（PDF） - Hitachi -> Renesas Electronics

零件编号

产品描述 (功能)

生产厂家

2SC5480

Silicon NPN Triple Diffused Horizntal Deflection Output

Hitachi -> Renesas Electronics 

2SC5480

Absolute Maximum Ratings (Ta = 25°C)

Item

Symbol

Collector to emitter voltage

Emitter to base voltage

Collector current

Collector peak current

Collector power dissipation

Junction temperature

VCES

VEBO

IC

ic(peak)

P Note1

C

Tj

Storage temperature

Tstg

Collector to emitter diode forward current ID

Note: 1. Value at Tc = 25°C

Ratings

Unit

1500

V

5

V

14

A

28

A

50

W

150

°C

–55 to +150

°C

14

A

Electrical Characteristics (Ta = 25°C)

Item

Symbol Min

Typ

Max

Unit Test Conditions

Emitter to base breakdown V(BR)EBO

5

voltage

—

—

V

IE = 500mA, IC = 0

Collector cutoff current

I CES

—

—

500

µA

VCE = 1500V, RBE = 0

DC current transfer ratio

hFE1

5

—

25

VCE = 5 V, IC = 1A

DC current transfer ratio

hFE2

4

—

7

VCE = 5 V, IC = 10A

Collector to emitter saturation VCE(sat)

—

—

5

voltage

V

IC = 10A, IB = 2.5A

Base to emitter saturation

VBE(sat)

—

—

1.5

V

voltage

IC = 10A, IB = 2.5A

Collector to emitter diode

VECF

forward voltage

—

—

2

V

IF = 14A

Fall time

tf

—

0.2

0.4

µs

ICP = 7A, IB1= 2.4A

fH = 31.5kHz

2

Share Link: