2SC5631 查看數據表（PDF） - Renesas Electronics

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2SC5631

Silicon NPN Epitaxial UHF / VHF Wide Band Amplifier

Renesas Electronics 

2SC5631

Absolute Maximum Ratings

(Ta = 25°C)

Item

Symbol

Ratings

Unit

Collector to base voltage

VCBO

15

V

Collector to emitter voltage

VCEO

6

V

Emitter to base voltage

VEBO

1.5

V

Collector current

IC

80

mA

Collector power dissipation

Pc

800*

mW

Junction temperature

Tj

150

°C

Storage temperature

Tstg

–55 to +150

°C

* When using alumina ceramic board (12.5 x 20 x 0.7 mm)

Electrical Characteristics

(Ta = 25°C)

Item

Symbol Min

Typ

Max Unit Test Conditions

Collector to base breakdown V(BR)CBO 15

—

—

V

voltage

IC = 10 µA , IE = 0

Collector cutoff current

ICBO

Collector cutoff current

ICEO

Emitter cutoff current

IEBO

DC current transfer ratio

hFE

Collector output capacitance Cob

—

—

1

µA

VCB = 12 V , IE = 0

—

—

1

mA

VCE = 6 V , RBE = ∞

—

—

10

µA

VEB = 1.5 V , IC = 0

80

120

160

V

VCE = 5 V , IC = 50 mA

—

1.6

2.2

pF

VCB = 5 V , IE = 0

f = 1 MHz

Gain bandwidth product

fT

8

11

—

GHz

VCE = 5 V , IC = 50 mA

f = 1 GHz

Power gain

PG

7

10

—

dB

VCE = 5 V , IC = 50 mA

f = 900 MHz

Noise figure

NF

—

1.2

1.9

dB

VCE = 5 V , IC = 5 mA

f = 900 MHz

Rev.3.00, Oct.20.2003, page 2 of 9

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