2SC5386 查看數據表（PDF） - Inchange Semiconductor
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2SC5386 Datasheet PDF : 4 Pages
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Inchange Semiconductor
Silicon NPN Power Transistors
Product Specification
2SC5386
DESCRIPTION
·With TO-3P(H)IS package
·High voltage;high speed
·Low collector saturation voltage
APPLICATIONS
·Horizontal deflection output for high
resolution display,color TV
·High speed switching applications
PINNING
PIN
1
2
3
DESCRIPTION
Base
Collector
Emitter
Fig.1 simplified outline (TO-3P(H)IS) and symbol
固IN电C半H导AN体GE SEMICONDUTOR Absolute maximum ratings(Ta=25℃)
SYMBOL
PARAMETER
VCBO
Collector-base voltage
VCEO
Collector-emitter voltage
CONDITIONS
Open emitter
Open base
VALUE
1500
600
UNIT
V
V
VEBO
Emitter-base voltage
Open collector
5
V
IC
Collector current
8
A
ICM
Collector current-Peak
16
A
IB
Base current
4
A
PC
Total power dissipation
TC=25℃
50
W
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-55~150
℃
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