Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits
English
한국어
日本語
русский
简体中文
español
零件编号
产品描述 (功能)
2SC5819(TE12L,F) 查看數據表(PDF) - Toshiba
零件编号
产品描述 (功能)
生产厂家
2SC5819(TE12L,F)
TOSHIBA Transistor Silicon NPN Epitaxial Type
Toshiba
2SC5819(TE12L,F) Datasheet PDF : 5 Pages
1
2
3
4
5
I
C
– V
CE
1.5
20 15
10
8
6
4
1
IB
=
2 mA
0.5
Common emitter
Ta
=
25°C
Single nonrepetitive pulse
0
0
0.2
0.4
0.6
0.8
Collector-emitter voltage V
CE
(V)
2SC5819
h
FE
– I
C
10000
Common emitter
VCE
=
2 V
Single nonrepetitive pulse
1000
Ta
=
100°C
25
−
55
100
10
0.001
0.01
0.1
1
10
Collector current I
C
(A)
V
CE (sat)
– I
C
1
Common emitter
IC/IB
=
50
Single nonrepetitive pulse
0.1
Ta
=
100°C
−
55
25
0.01
0.001
0.001
0.01
0.1
1
10
Collector current I
C
(A)
V
BE (sat)
– I
C
10
Common emitter
IC/IB
=
50
Single nonrepetitive
pulse
25
−
55
1
Ta
=
100°C
0.1
0.001
0.01
0.1
1
10
Collector current I
C
(A)
1.5
Common emitter
VCE
=
2 V
Single nonrepetitive
1.2
pulse
I
C
– V
BE
0.9
0.6
Ta
=
100°C
−
55
0.3
25
0
0
0.3
0.6
0.9
1.2
1.5
Base-emitter voltage V
BE
(V)
3
2004-07-07
Share Link:
datasheetq.com [
Privacy Policy
]
[
Request Datasheet
] [
Contact Us
]