2SC5886 查看數據表（PDF） - Toshiba
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2SC5886 Datasheet PDF : 5 Pages
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TOSHIBA Transistor Silicon NPN Epitaxial Type
2SC5886
High-Speed Swtching Applications
DC-DC Converter Applications
2SC5886
Unit: mm
• High DC current gain: hFE = 400 to 1000 (IC = 0.5 A)
• Low collector-emitter saturation: VCE (sat) = 0.22 V (max)
• High-speed switching: tf = 55 ns (typ.)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
DC
Pulse
Base current
Collector power
dissipation
Ta = 25°C
Tc = 25°C
Junction temperature
Storage temperature range
VCBO
VCEX
VCEO
VEBO
IC
ICP
IB
PC
Tj
Tstg
100
V
80
V
50
7
V
5
A
10
0.5
A
1
W
20
150
°C
−55 to 150
°C
JEDEC
―
JEITA
―
TOSHIBA
2-7J1A
Weight: 0.36 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
1
2006-11-10
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