C6012 查看數據表（PDF） - Panasonic Corporation
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C6012 Datasheet PDF : 3 Pages
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Power Transistors
2SC6012
Silicon NPN triple diffusion mesa type
For horizontal deflection output
■ Features
• High breakdown voltage, and high reliability through the use of a
glass passivation layer
• High-speed switching
• Wide safe oeration area
■ Absolute Maximum Ratings TC = 25°C
Parameter
Symbol Rating
Unit
Collector-base voltage (Emitter open) VCBO
1 700
V
Collector-emitter voltage (E-B short) VCES
1 700
V
Emitter-base voltage (Collector open) VEBO
7
V
Base current
IB
3
A
Collector current
IC
15
A
Peak collector current *
ICP
24
A
Collector power dissipation
PC
60
W
Ta = 25°C
3
Junction temperature
Tj
150
°C
Storage temperature
Tstg −55 to +150 °C
Note) *: Non-repetitive peak collector current
Unit: mm
15.5±0.5 φ 3.2±0.1
5˚
3.0±0.3
5˚
5˚
(4.0)
5˚
2.0±0.2
5˚
1.1±0.1
0.7±0.1
5.45±0.3
10.9±0.5
5˚
12 3
1: Base
2: Collector
3: Emitter
EIAJ: SC-94
TOP-3E-A1 Package
Internal Connection
C
B
E
■ Electrical Characteristics TC = 25°C ± 3°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Emitter-base voltage (Collector open) *
Forward voltage *
Collector-base cutoff current (Emitter open)
VEBO
VF
ICBO
Forward current transfer ratio *
Collector-emitter saturation voltage *
Base-emitter saturation voltage *
Transition frequency
Storage time
Fall time
hFE
VCE(sat)
VBE(sat)
fT
tstg
tf
IE = 750 mA, IC = 0
IF = 7.0 A
VCB = 1 000 V, IE = 0
VCB = 1 700 V, IE = 0
VCE = 5 V, IC = 7.0 A
IC = 7.0 A, IB = 1.75 A
IC = 7.0 A, IB = 1.75 A
VCE = 10 V, IC = 0.5 A, f = 0.5 MHz
IC = 7.0 A, Resistance loaded
IB1 = 1.75 A, IB2 = −3.5 A
7
V
−2
V
50
µA
1
mA
7
12
3.0
V
1.5
V
2.1
MHz
5.0
µs
0.5
µs
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Pulse measurement
Publication date: July 2004
SJD00321AED
1
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